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Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

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Date

2005

Authors

Mokkapati, Sudha
Lever McGowan, Penelope
Tan, Hoe Hark
Jagadish, Chennupati
McBean, K E
Phillips, Matthew R

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a

Description

Keywords

Keywords: Chemical vapor deposition; Crystal growth; Epitaxial growth; Optoelectronic devices; Quantum electronics; Semiconducting indium; Semiconductor quantum dots; (PL) properties; device integration; Microelectronic materials; MOCVD growth; Quantum Dot (CO); Se Integrated optoelectronic devices; Quantum dot; Selective area epitaxy

Citation

URI

http://hdl.handle.net/1885/54013

Collections

Open Access Research

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2004.1577543

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