Research and development of tunneling effect through semiconductor multi-barrier structures

Abstract

Starting from investigating the physical properties of tunneling effect through semiconductor multi-barrier structures and optimizing the structures and performance of electronic devices, this paper discusses the research and development of tunneling effect through semiconductor multi-barrier structures. Analytical solutions and numerical examples of tunneling effect through one-dimension semiconductor heterostructures have been summarized. Research and development of tunneling effect through semiconductor double barrier structures have been stressed. It includes resonant quasi-levels of coupling between transverse and longitudinal wave through symmetrical double barrier structures and analytical calculation of the resonant quasi-level lifetime in double barrier structures. Show more