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Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

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Date

2011

Authors

Umezu, Ikurou
Kohno, A
Warrender, Jeffrey M.
Takatori, Y
Hirao, Y
Nakagawa, S
Sugimura, A
Charnvanichborikarn, Supakit
Williams, James
Aziz, Michael

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.

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Keywords

Citation

URI

http://hdl.handle.net/1885/33973

Collections

Open Access Research

Source

AIP Conference Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.3666252

Restricted until

2037-12-31

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01_Umezu_Strong_mid-infrared_optical_2011.pdf (786.17 KB)

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