Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Chen, Yimin; Wang, Guoxiang; Shen, Xiang; Xu, Tiefeng; Wang, R. P.; Wu, Liangcai; Lu, Yegang; Li, Junjian; Dai, Shixun; Nie, Qiuhua

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Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Date

2014-02-07

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Abstract

ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

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https://dspace-test.anu.edu.au/handle/1885/733747841

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DevOps Pure Testing

Source

CrystEngComm

Type

Article

DOI

10.1039/c3ce42024h

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Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

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