Test environment running 7.6.6

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

Date

Authors

Fu, Lan

Lever McGowan, Penelope

Stewart Sears, Kalista

Tan, Hoe Hark

Jagadish, Chennupati

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. T

Keywords

Keywords: Current voltage characteristics; Metallorganic chemical vapor deposition; Semiconducting indium gallium arsenide; Semiconductor growth; Semiconductor quantum dots; Peak responsivity; Quantum dot infrared photodetectors (QDIPs); Photodetectors Infrared photodetectors; Metal-organic chemical vapor deposition (MOCVD); Quantum dot infrared photodetectors (QDIPs); Quantum dots

URI

http://hdl.handle.net/1885/84152

Collections

Open Access Research

Source

IEEE Electron Device Letters

Type

Journal article

DOI

10.1109/LED.2005.853635

Restricted until

2037-12-31

Downloads

File

Description

01_Fu_In_0.5_Ga_0.5_As/GaAs_Quantum_2005.pdf (589.91 KB)