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Instability of Nanocavities in Amorphous Silicon

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Date

1999

Authors

Zhu, Xiaohua
Williams, James
Llewellyn, David
McCallum, J

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The influence of implant-induced amorphization and its subsequent solid phase epitaxial growth (SPEG) on the stability of nanocavities in Si was investigated. To monitor the gettering efficiency of cavities, gold was introduced to the wafer before and after amorphization. Rutherford backscattering (RBS) and channeling combined with cross-sectional transmission electron microscopy were used to characterize the samples. The structural observations were also correlated with kinetic data from in situ SPEG measurements carried out using time-resolved reflectivity (TRR).

Description

Keywords

Keywords: Amorphization; Annealing; Crystal growth from melt; Epitaxial growth; Ion implantation; Rutherford backscattering spectroscopy; Silicon wafers; Transmission electron microscopy; Nanocavities; Amorphous silicon

Citation

URI

http://hdl.handle.net/1885/93412

Collections

Open Access Research

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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