Improved resistive switching properties of solution processed ti O 2 thin films

Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Park, Jubong; Hwang, Hyunsang

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Improved resistive switching properties of solution processed ti O 2 thin films

Date

2010

Authors

Biju, Kuyyadi P.

Liu, Xinjun

Bourim, El Mostafa

Kim, Insung

Jung, Seungjae

Park, Jubong

Hwang, Hyunsang

Publisher

Electrochemical Society Inc

Abstract

Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films are investigated. The Pt/TiO 2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability a

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http://hdl.handle.net/1885/65599

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Open Access Research

Source

Electrochemical and Solid-State Letters

Type

Journal article

DOI

10.1149/1.3494433

Restricted until

2037-12-31

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Improved resistive switching properties of solution processed ti O 2 thin films

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