Hegeler, F.Manasreh, M. O.Morath, C.Ballet, P.Yang, H.Salamo, G. J.Tan, H. H.Jagadish, Chennupati2025-03-152025-03-15researchoutputwizard:MigratedxPub18917Scopus:0010752537https://dspace-test.anu.edu.au/handle/1885/733716652Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4 × 1014 cm-2. More than 80% recovery of these depleted transitions was achieved after the samples were thermally annealed at temperatures less than 650°C. The total integrated areas and peak position energies of the intersubband transitions in irradiated and unirradiated samples were monitored as a function of annealing temperature. It was noted that the recovery of the depleted intersubband transitions in irradiated samples depend on the irradiation dose and thermal annealing temperature.3EnglishThermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells2000-10-3010.1063/1.1320846http://www.scopus.com/inward/record.url?scp=0010752537&partnerID=8YFLogxK