Dao, Lap VanGal, MichaelCarmody, CTan, Hoe HarkJagadish, Chennupati2010-05-042010-12-202010-05-042010-12-20Journal of Applied Physics 88.9 (2000): 5252-52540021-89791089-7550http://hdl.handle.net/10440/1028http://digitalcollections.anu.edu.au/handle/10440/1028We have compared the time integrated photoluminescence (PL) and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier collection efficiency of the quantum wells is more efficient in samples intermixed by ion implantation.3 pageshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2000 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)indium compoundsgallium arsenideIII-V semiconductorssemiconductor quantum wellsphotoluminescencecarrier lifetimeion implantationtime resolved spectracarrier relaxation time2000-11-0110.1063/1.13149042015-12-12