Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Wong-Leung, J.; Janson, M. S.; Svensson, B. G.

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Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Date

2003-06-01

Authors

Wong-Leung, J.

Janson, M. S.

Svensson, B. G.

Publisher

American Institute of Physics

Abstract

The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the ran