Proximity gettering of Au to ion beam induced defects in silicon

Abstract

Rutherford backscattering and transmission electron microscopy have been used to anlayse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containinkg a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850°C for 1 h. Show more