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Electronic Conduction Properties of Au/C 60 /p-Si and C 60 /Au/p-Si Sandwich Structures: I-V and Transducer Characteristics

Date

Authors

Berdinsky, A.S.

Fink, Dietmar

Yoo, J B

Chadderton, Lewis

Chun, H.G.

Han, J H

Dragunov, V.P.

Publisher

Pergamon-Elsevier Ltd

Abstract

Gold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-n

Keywords

Keywords: Fullerite crystal films; Silicon pressure transducers; Crystallization; Crystals; Equivalent circuits; Fullerenes; Heavy ions; Heterojunctions; Radiation effects; Sandwich structures; Scanning electron microscopy; Silicon; Strain; Thin films; Transducers; A. Fullerenes; A. Heterojunctions; A. Thin films; C. Scanning and transmission electron microscopy; D. Radiation effects and pressure

URI

http://hdl.handle.net/1885/78212

Collections

Open Access Research

Source

Solid State Communications

Type

Journal article

DOI

10.1016/j.ssc.2004.03.051

Restricted until

2037-12-31

Downloads

File

Description

01_Berdinsky_Electronic_Conduction_2004.pdf (441.36 KB)

02_Berdinsky_Electronic_Conduction_2004.pdf (152.22 KB)