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Structural Perturbations Within Ge Nanocrystals in Silica

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Date

2004

Authors

Cheung, Allen
de Azevedo, Gustavo
Glover, Christopher
Llewellyn, David
Elliman, Robert
Foran, Garry J
Ridgway, Mark C

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.

Description

Keywords

Keywords: Annealing; Atoms; Computer simulation; Crystal microstructure; Grain size and shape; Interfaces (materials); Ion implantation; Molecular dynamics; Semiconducting germanium; Silica; Thermooxidation; X ray spectroscopy; Bonding distortion; Extended x ray ab

Citation

URI

http://hdl.handle.net/1885/74829

Collections

Open Access Research

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1639136

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