Lattice location of lead implanted into silicon at room temperature
| dc.contributor.author | Christodoulides, C. E. | en |
| dc.contributor.author | Grant, W. A. | en |
| dc.contributor.author | Williams, J. S. | en |
| dc.date.accessioned | 2025-03-22T19:29:18Z | |
| dc.date.available | 2025-03-22T19:29:18Z | |
| dc.date.issued | 1977 | en |
| dc.description.abstract | Rutherford backscattering has been used to measure the lattice positions occupied by Pb following room temperature implantation into silicon. The data provide information on the size and deposition of amorphous zones in relation to the distribution of implanted Pb. | en |
| dc.description.status | true | en |
| dc.format.extent | 3 | en |
| dc.identifier.other | Scopus:0017524880 | en |
| dc.identifier.uri | https://dspace-test.anu.edu.au/handle/1885/733730282 | |
| dc.identifier.url | http://www.scopus.com/inward/record.url?scp=0017524880&partnerID=8YFLogxK | en |
| dc.language.iso | English | en |
| dc.source | Applied Physics | en |
| dc.subject | 79.20 | en |
| dc.subject | 85.30 | en |
| dc.title | Lattice location of lead implanted into silicon at room temperature | en |
| dc.type | Article | en |
| local.bibliographicCitation.lastpage | 393 | en |
| local.bibliographicCitation.startpage | 391 | en |
| local.contributor.affiliation | Christodoulides, C. E.; University of Salford | en |
| local.contributor.affiliation | Grant, W. A.; University of Salford | en |
| local.contributor.affiliation | Williams, J. S.; University of Salford | en |
| local.identifier.citationvolume | 13 | en |
| local.identifier.doi | 10.1007/BF00882616 | en |
| local.identifier.pure | d66455ff-6ba5-41d5-970b-21ad8607a068 | en |
| local.type.status | Published | en |