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Si delta-doped layers of GaAs by low pressure metalorganic vapor phase epitaxy

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Date

1993

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Abstract

Si delta-doped layers of GaAs were grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). The results showed that, in LP-MOVPE, growth rate plays a crucial role in confinement of dopants and growth temperature has only a secondary effect. Effects of purge time, doping temperature, and doping period on sheet carrier concentration of delta-doped layers were studied. The effect of growth rate on confinement of dopants was discussed.

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https://dspace-test.anu.edu.au/handle/1885/733731629

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DevOps Pure Testing

Source

Journal of Applied Physics

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Article

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DOI

10.1063/1.354740

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