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Passivation of aluminium-n + silicon contacts for solar cells by ultrathin Al 2 O3 and SiO 2 dielectric layers

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Date

2013

Authors

Bullock, James
Yang, Di
Cuevas, Andres

Journal Title

Journal ISSN

Volume Title

Publisher

Wiley-VCH Verlag GMBH

Abstract

Ultra-thin thermally grown SiO2 and atomic-layer-deposited (ALD) Al2O3 films are trialled as passivating dielectrics for metal-insulator-semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar ce

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Keywords

Citation

URI

http://hdl.handle.net/1885/30158

Collections

Open Access Research

Source

Physica Status Solidi: Rapid Research Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1002/pssr.201308115

Restricted until

2037-12-31

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01_Bullock_Passivation_of_aluminium-n_+__2013.pdf (612.49 KB)

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