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Finite Element Modeling of Resistive Switching in Nb 2 O 5 -based Memory Device

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Date

2014

Authors

Liu, Xinjun
Nandi, Sanjoy
Venkatachalam, Dinesh
Li, Shuai
Belay, Kidane
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

A physical electro-thermal model that describes bipolar resistance switching in Nb<inf>2</inf>O<inf>5</inf>-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices. � 2014 IEEE.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/61555

Collections

Open Access Research

Source

COMMAD 2014

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2014.7038711

Restricted until

2037-12-31

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01_Liu_Finite_Element_Modeling_of_2014.pdf (413.58 KB)

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