Test environment running 7.6.6

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Strain-induced direct band gap LaAlO3 nanocrystals

Loading...
Thumbnail Image

Date

Authors

Yuan, C L
Xu, B
Lei, Wen

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Bulk LaAlO3 has a rhombohedral structure at ambient conditions. However, when the diameter of free-standing LaAlO3 nanocrystal is smaller than 100 nm, it has at room temperature a thermodynamically stable cubic structure with indirect band gap. The LaAlO3 nanocrystals embedded in amorphous Lu2O3 matrix were fabricated using pulsed laser deposition method and rapid thermal annealing technique. The LaAlO3 nanocrystals experience a net deviatoric strain from Lu2O3 matrix, which causes a distortion of the AlO6 octahedra. This leads to the growth of strain-induced direct band gap LaAlO3 nanocrystals with rhombohedral structure. Strain engineering is an effective tool for tailoring the properties of LaAlO3 nanocrystals.

Description

Keywords

Citation

Source

Materials Letters

Book Title

Entity type

Access Statement

License Rights

Restricted until

2037-12-31