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Effect of antimony on the electrical properties of Pb0.8Sn0.2Te thin films

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Date

1988

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Abstract

Antimony doped films of Pb0.8Sn0.2Te, the composition of interest for IR detectors, were grown by flash evaporation. Hall coefficient and d.c. conductivity studies were made on these films in the temperature range 77-500 K. Results have been analysed in the light of double valence band model and various band parameters, e.g. valence band separation, effective mass ratio, population ratio, light to heavy hole mobility ratio etc have been calculated as a function of doping density of antimony.

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https://dspace-test.anu.edu.au/handle/1885/733746528

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DevOps Pure Testing

Source

Infrared Physics

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Article

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DOI

10.1016/0020-0891(88)90020-6

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