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Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

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dc.contributor.authorRudawski, N. G.en
dc.contributor.authorJones, K. S.en
dc.contributor.authorElliman, R. G.en
dc.date.accessioned2025-03-15T05:33:17Z
dc.date.available2025-03-15T05:33:17Z
dc.date.issued2008en
dc.description.abstractThe influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5-50 keV with peak As concentration of ∼5.0× 1020 cm-3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.en
dc.description.sponsorshipThe authors wish to acknowledge The Semiconductor Research Corporation for funding this research.en
dc.description.statustrueen
dc.format.extent4en
dc.identifier.otherresearchoutputwizard:u3488905xPUB145en
dc.identifier.otherScopus:38849094047en
dc.identifier.otherWOS:253399000084en
dc.identifier.urihttps://dspace-test.anu.edu.au/handle/1885/733716472
dc.identifier.urlhttp://www.scopus.com/inward/record.url?scp=38849094047&partnerID=8YFLogxKen
dc.language.isoEnglishen
dc.sourceJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen
dc.titleInfluence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafersen
dc.typeArticleen
local.bibliographicCitation.lastpage438en
local.bibliographicCitation.startpage435en
local.contributor.affiliationRudawski, N. G.; University of Floridaen
local.contributor.affiliationJones, K. S.; University of Floridaen
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.citationvolume26en
local.identifier.doi10.1116/1.2775459en
local.identifier.puredb0b7802-f9e0-463b-b7bd-19cacc9d5af5en
local.type.statusPublisheden

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