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Nanomechanical properties of sputter-deposited HfO₂ and HfₓSi₁ˍₓO₂ thin films

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dc.contributor.authorVenkatachalam, D. K.
dc.contributor.authorBradby, J. E.
dc.contributor.authorSaleh, M. N.
dc.contributor.authorRuffell, S.
dc.contributor.authorElliman, R. G.
dc.date.accessioned2015-12-07T01:32:23Z
dc.date.available2015-12-07T01:32:23Z
dc.date.issued2011-08-29
dc.date.updated2015-12-08T02:58:26Z
dc.description.abstractThe mechanical properties of sputter-deposited HfO₂ and HfₓSi₁ˍₓO₂films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 °C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with increasing HfO₂ content, with the hardness increasing from 5.0 ± 0.3 GPa for pure SiO₂ to 8.4 ± 0.4 GPa for pure HfO₂. All films were found to be harder after annealing at 1000 °C, with the increase for SiO₂films attributed to densification of the SiO₂ network and that for the HfₓSi₁ˍₓO₂films to a combination of phase separation, densification, and crystallization.
dc.description.sponsorshipThe authors wish to acknowledge the Australian Research Council (ARC) for financial support. J.E.B. wishes to further acknowledge the ARC for QEII Fellowship.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/17051
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 7/12/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3627155
dc.sourceJournal of Applied Physics
dc.titleNanomechanical properties of sputter-deposited HfO₂ and HfₓSi₁ˍₓO₂ thin films
dc.typeJournal article
local.bibliographicCitation.issue4en_AU
local.bibliographicCitation.startpage043527en_AU
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationNawaz (Saleh), Muhammad, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4575027en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.ariespublicationu4575027xPUB10en_AU
local.identifier.citationvolume110en_AU
local.identifier.doi10.1063/1.3627155en_AU
local.identifier.scopusID2-s2.0-80052396471
local.identifier.thomsonID000294484300047
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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