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Boron enhanced H diffusion in amorphous Si formed by ion implantation

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Date

2008

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Abstract

Boron enhanced H diffusion in amorphous Si (a-Si) layers formed by ion implantation is observed using secondary ion mass spectroscopy (SIMS). Constant concentrations of B were achieved using multiple energy B implantations into thick a-Si layers. The evolution of single H implanted profiles centered on the uniformly B-implanted regions was studied for partial anneals at temperatures in the range 380 - 640 °C. Boron enhanced diffusion is observed and the enhanced diffusion coefficient shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is considered in light of these results.

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https://dspace-test.anu.edu.au/handle/1885/733742179

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DevOps Pure Testing

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Conference contribution

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DOI

10.1557/proc-1070-e05-05

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