The measurement of Pb+ ion collection in Si by high depth-resolution Rutherford backscattering

Williams, J. S.

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

The measurement of Pb+ ion collection in Si by high depth-resolution Rutherford backscattering

Date

1975-02-10

Authors

Williams, J. S.

Abstract

Pb distributions for 20 keV Pb+ implantations into Si have been measured as a function of dose by glancing angle Rutherford backscattering. For Pb doses in excess of 1015 ions cm-2, Pb accumulation at the target surface has been observed.

URI

https://dspace-test.anu.edu.au/handle/1885/733731208

Collections

DevOps Pure Testing

Source

Physics Letters, Section A: General, Atomic and Solid State Physics

Type

Article

DOI

10.1016/0375-9601(75)90235-2

Full item page

Cultural advice

The measurement of Pb+ ion collection in Si by high depth-resolution Rutherford backscattering

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Citation

URI

Collections

Source

Type

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until