Boron diffusion in amorphous silicon-germanium alloys

Edelman, L. A.; Phen, M. S.; Jones, K. S.; Elliman, R. G.; Rubin, L. M.

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Boron diffusion in amorphous silicon-germanium alloys

Date

2008

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Abstract

The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

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https://dspace-test.anu.edu.au/handle/1885/733716764

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DevOps Pure Testing

Source

Applied Physics Letters

Type

Article

DOI

10.1063/1.2919085

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Boron diffusion in amorphous silicon-germanium alloys

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