Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants

Suh, Dongchui; Liang, Wensheng

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Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants

Date

2014

Authors

Suh, Dongchui

Liang, Wensheng

Publisher

Wiley-VCH Verlag GMBH

Abstract

We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The

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http://hdl.handle.net/1885/75818

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Open Access Research

Source

Physica Status Solidi: Rapid Research Letters

Type

Journal article

DOI

10.1002/pssr.201409263

Restricted until

2037-12-31

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Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants

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