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On the electronic improvement of multi-crystalline silicon via gettering and hydrogenation

Date

Authors

Tan, Jason

Cuevas, Andres

MacDonald, Daniel

Trupke, Thorsten

Roth, Kristin

Bardos, R A

Publisher

John Wiley & Sons Inc

Abstract

The electronic properties of multi-crystalline silicon must be improved during solar cell fabrication if highly efficient devices are to be made. This work shows how gettering and silicon nitride induced hydrogénation improve three properties: carrier li

Keywords

Keywords: Carrier concentration; Crystalline materials; Electron traps; Getters; Hydrogenation; Photoluminescence; Electronic improvement; Gettering; Iron concentration; Mc Si; Multicrystalline silicon; Trap density; Silicon nitride Gettering; Hydrogénation; mc-Si; SiN

URI

http://hdl.handle.net/1885/54970

Collections

Open Access Research

Source

Progress in Photovoltaics: Research and Applications

Type

Journal article

DOI

10.1002/pip.775

Restricted until

2037-12-31

Downloads

File

Description

01_Tan_On_the_electronic_improvement_2008.pdf (353.02 KB)