Effect of ion species on the accumulation of ion-beam damage in GaN

Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Zou, Jin; Li, Gang; Titov, A I

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Effect of ion species on the accumulation of ion-beam damage in GaN

Date

2001

Authors

Kucheyev, Sergei

Williams, James

Jagadish, Chennupati

Zou, Jin

Li, Gang

Titov, A I

Publisher

American Physical Society

Abstract

Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV 1H, 40 keV 12C 50 keV 16O, 600 keV 28Si. 130 keV 63Cu, 200 keV 107Ag, 300 keV 197Au, and 500 keV 209Bi) are studied by a combination of Rutherford backscattering/channeling (RBS/C)

Keywords

Keywords: gallium; ion; nitrogen derivative; article; calculation; irradiation; mathematical analysis; physics; temperature; transmission electron microscopy

URI

http://hdl.handle.net/1885/68439

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Open Access Research

Source

Physical Review B

Type

Journal article

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Effect of ion species on the accumulation of ion-beam damage in GaN

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