Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

Feldman, L. C.; Silverman, P. J.; Williams, J. S.; Jackman, T. E.; Stensgaard, I.

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Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

Date

1978

Authors

Abstract

We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.

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https://dspace-test.anu.edu.au/handle/1885/733737290

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DevOps Pure Testing

Source

Physical Review Letters

Type

Article

DOI

10.1103/PhysRevLett.41.1396

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Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

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