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Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

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Date

2012

Authors

Johnson, Brett
Stavrias, Nikolas
Haberl, Bianca
Bayu Aji, Leonardus Bimo
Bradby, Jodie
McCallum, Jeffrey C
Williams, James

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/60271

Collections

Open Access Research

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472374

Restricted until

2037-12-31

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Description
01_Johnson_Raman_study_on_the_phase_2012.pdf (319.43 KB)

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