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III-V semiconductor nanowires for optoelectronic device applications

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Date

2011

Authors

Joyce, Hannah J
Gao, Qiang
Tan, Hoe Hark
Jagadish, Chennupati
Kim, Yong
Zou, Jin
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Parkinson, Patrick

Journal Title

Journal ISSN

Volume Title

Publisher

Pergamon Press

Abstract

III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the rad

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/38329

Collections

Open Access Research

Source

Progress in Quantum Electronics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/ICMAP.2013.6733456

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