Recombination activity of manganese in p- and n-type crystalline silicon

MacDonald, Daniel; Rosenits, Philipp; Deenapanray, Prakash

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Recombination activity of manganese in p- and n-type crystalline silicon

Date

2007

Authors

MacDonald, Daniel

Rosenits, Philipp

Deenapanray, Prakash

Publisher

Institute of Physics Publishing

Abstract

Silicon wafers implanted with low doses of manganese were annealed at 900 °C to distribute the Mn throughout the sample volume, and were subjected to carrier lifetime measurements. The Mn centres thus introduced were found to decrease the recombination l