LASER ANNEALING FOR ION IMPLANTED SILICON AND GaAs.

Williams, J. S.; Harrison, H. B.

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LASER ANNEALING FOR ION IMPLANTED SILICON AND GaAs.

Date

1979

Authors

Williams, J. S.

Harrison, H. B.

Abstract

Laser annealing has made an impact on device processing. Not only does laser irradiation allow localized heating both in depth and laterally, it offers the possibility of obtaining supersaturated solid solutions of dopant in semiconductors with electrical activities far exceeding those obtainable by furnace annealing.

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https://dspace-test.anu.edu.au/handle/1885/733728338

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DevOps Pure Testing

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Paper

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Cultural advice

LASER ANNEALING FOR ION IMPLANTED SILICON AND GaAs.

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