Recrystallization of high energy As-implanted GaAs studied by transmission electron microscopy

Abstract

Ion implantation damage and the regrowth process during thermal annealing of 2 MeV As-ion-implanted GaAs were studied by transmission electron microscopy. With low-temperature annealing, a high denisty of stacking faults was formed during the recrystallization process, but they were rarely observed with high-temperature annealing. At intermediate temperatures, a much lower denisty of stacking faults was generated at the upper interface between the buried amorphous layer and the crystal than that at the lower interface, where a higher concentration of as-implanted arsenic exists. Based on the observed experimental results, an atomic model is proposed to explain the formation of stacking faults induced by As clusters. Show more