High performance silicon solar cells using low dose phosphorus implants

Blakers, Andrew W.; Green, Martin A.; Willison, Michael R.

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High performance silicon solar cells using low dose phosphorus implants

Date

1981-12-31

Authors

Blakers, Andrew W.

Green, Martin A.

Willison, Michael R.

Abstract

A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.

URI

https://dspace-test.anu.edu.au/handle/1885/733725465

Collections

DevOps Pure Testing

Source

Nuclear Instruments and Methods

Type

Article

DOI

10.1016/0029-554X(81)90981-2

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High performance silicon solar cells using low dose phosphorus implants

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