Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

Abstract

An analytical procedure to extract the surface recombination velocity of the SiO2/n-type silicon interface, Sp, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of Sp are significantly affected by the assumed material parameters for highly doped silicon, τp, μp and Δ Egapp. Updated values for these parameters are used to obtain the dependence of Sp on the phosphorus concentration, ND, using both previous and new experimental data. The new evidence supports the finding that Sp increases strongly with ND. Show more