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Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

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Date

2008-05-14

Authors

Jolley, G.
Fu, L.
Tan, H. H.
Jagadish, C.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

We report on the effects of the quantum well(QW) thickness on the spectral response and other characteristics of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈Asquantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.

Description

Keywords

Keywords: Metallorganic chemical vapor deposition; Parameter estimation; Semiconducting indium compounds; Semiconductor quantum dots; Spectrum analysis; Infrared photodetectors; Spectral properties; Infrared detectors

Citation

URI

http://hdl.handle.net/1885/16008

Collections

Open Access Research

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.2927487

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