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Effect of atomic H exposure on thermally oxidized Si/Si02 interfaces

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dc.contributor.authorZhang, Chun
dc.contributor.authorWeber, Klaus
dc.contributor.authorJin, Hao
dc.contributor.editorW. Sinke
dc.contributor.editorH.Ossenbrink
dc.contributor.editorP.Helm
dc.coverage.spatialHamburg Germany
dc.date.accessioned2015-12-10T22:40:59Z
dc.date.createdSeptember 21-24 2009
dc.date.issued2009
dc.date.updated2015-12-09T11:03:02Z
dc.identifier.isbn3936338256
dc.identifier.urihttp://hdl.handle.net/1885/57694
dc.publisherWIP-Renewable Energies
dc.relation.ispartofseriesEuropean Photovoltaic Solar Energy Conference 2009
dc.sourceProceedings of the 24th European Photovoltaic Solar Energy Conference
dc.titleEffect of atomic H exposure on thermally oxidized Si/Si02 interfaces
dc.typeConference paper
local.bibliographicCitation.lastpage574
local.bibliographicCitation.startpage570
local.contributor.affiliationZhang, Chun, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.authoruidZhang, Chun, u4386278
local.contributor.authoruidWeber, Klaus, u9116880
local.contributor.authoruidJin, Hao, u4065013
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090607 - Power and Energy Systems Engineering (excl. Renewable Power)
local.identifier.ariespublicationu4334215xPUB411
local.type.statusPublished Version

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