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Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

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Date

2002

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Abstract

We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures.

Description

Keywords

Femtosecond optics, Semiconductor surface fields, Terajertz (Thz)/far-infrared emission

Citation

URI

https://dspace-test.anu.edu.au/handle/1885/733743584

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DevOps Pure Testing

Source

Physica E: Low-Dimensional Systems and Nanostructures

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Article

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DOI

10.1016/S1386-9477(02)00229-1

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