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Emission of collimated THz pulses from photo-excited semiconductors

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Date

2004

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Abstract

It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs.

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https://dspace-test.anu.edu.au/handle/1885/733725619

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DevOps Pure Testing

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Semiconductor Science and Technology

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Article

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DOI

10.1088/0268-1242/19/4/147

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