LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

Wagenfeld, H. K.; Williams, J. S.; Harrison, H. B.; Elliman, R. G.

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LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

Date

1980

Authors

Abstract

Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.

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https://dspace-test.anu.edu.au/handle/1885/733723794

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DevOps Pure Testing

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Annual Proceedings - Reliability Physics (Symposium)

Type

Conference article

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Cultural advice

LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

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