Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
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Capiod, P.
Xu, T.
Nys, J. P.
Berthe, M.
Patriarche, G.
Lymperakis, L.
Neugebauer, J.
Caroff, P.
Dunin-Borkowski, R. E.
Ebert, Ph.
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American Institute of Physics
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The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.
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Applied Physics Letters
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