Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

MacDonald, Daniel; Mackel, Helmut; Doshi, Sachin; Brendle, Willi; Cuevas, Andres; Williams, James; Conway, Martin

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Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Date

2003

Authors

MacDonald, Daniel

Mackel, Helmut

Doshi, Sachin

Brendle, Willi

Cuevas, Andres

Williams, James

Conway, Martin

Publisher

American Institute of Physics (AIP)

Abstract

The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.