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Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments

Date

Authors

Williams, James

Young, I M

Conway, Martin

Publisher

Elsevier

Abstract

This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener

Keywords

Keywords: Amorphous silicon; Carbon; Crystallization; Epitaxial growth; Helium; Rutherford backscattering spectroscopy; Channeling; Ion beam induced epitaxial crystallisation; Ion beams

URI

http://hdl.handle.net/1885/24523

Collections

Open Access Research

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(99)00904-0

Restricted until

2037-12-31

Downloads

File

Description

01_Williams_Ion_Beam_Induced_Epitaxy_2000.pdf (136.14 KB)