Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Xu, Q.; Sharp, I. D.; Yuan, C. W.; Yi, D. O.; Liao, C. Y.; Glaeser, A. M.; Minor, A. M.; Beeman, J. W.; Ridgway, M. C.; Kluth, P.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.

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Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Date

2006

Authors

Abstract

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

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https://dspace-test.anu.edu.au/handle/1885/733716379

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DevOps Pure Testing

Source

Physical Review Letters

Type

Article

DOI

10.1103/PhysRevLett.97.155701

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Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

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