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High-power vertical cavity surface emitting laser with good performances

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Date

2004-07-08

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Abstract

Fabrication and performance of a high-power bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser with 430 μm diameter are described. The device realises the maximum room temperature CW output power 1.52 W at 987.6 nm with FWHM 0.8 nm. The far-field divergence angle is below 20°. Reliability test shows at 70°C an output power 0.35 W over 500 h.

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https://dspace-test.anu.edu.au/handle/1885/733726361

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DevOps Pure Testing

Source

Electronics Letters

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Article

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DOI

10.1049/el:20045045

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