Single-layer semiconducting nanosheets

Zeng, Zhiyuan; Yin, Zongyou; Huang, Xiao; Li, Hai; He, Qiyuan; Lu, Gang; Boey, Freddy; Zhang, Hua

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Single-layer semiconducting nanosheets

Date

2011-11-18

Authors

Abstract

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.