Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs

Abstract

The nonlinear optical absorption of arsenic and oxygen implanted epitaxial GaAs for a range of ion doses and annealing temperatures were examined. Results showed that ion implantation decreases response time (τA) and parameter (Mmax), with the decrease in parameter being attributed to an increase in nonbleachable losses. It was observed that data gathered from all annealed arsenic and oxygen implanted GaAs lie on a well-defined curve in the τA-Mmax plane. This implies that the residual defects after annealing are similar and that the curve represents the achievable τA, Mmax performance of ion implanted GaAs. Show more