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Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP

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Date

2004

Authors

Carmody, C
Tan, Hoe Hark
Jagadish, Chennupati
Douheret, O
Maknys, K
Anand, S
Zou, Jin
Dao, Lap Van
Gal, Michael

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.

Description

Keywords

Keywords: Annealing; Atomic force microscopy; Carrier concentration; Crystallization; Electric properties; Gallium; Ion beams; Ion implantation; Optical properties; Photoluminescence; Scanning electron microscopy; Transmission electron microscopy; X ray diffraction

Citation

URI

http://hdl.handle.net/1885/76708

Collections

Open Access Research

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1633349

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