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Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP

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dc.contributor.authorCarmody, C
dc.contributor.authorTan, Hoe Hark
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorDouheret, O
dc.contributor.authorMaknys, K
dc.contributor.authorAnand, S
dc.contributor.authorZou, Jin
dc.contributor.authorDao, Lap Van
dc.contributor.authorGal, Michael
dc.date.accessioned2015-12-13T22:36:20Z
dc.date.available2015-12-13T22:36:20Z
dc.date.issued2004
dc.date.updated2015-12-11T09:31:16Z
dc.description.abstractThe ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/76708
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Annealing; Atomic force microscopy; Carrier concentration; Crystallization; Electric properties; Gallium; Ion beams; Ion implantation; Optical properties; Photoluminescence; Scanning electron microscopy; Transmission electron microscopy; X ray diffraction
dc.titleStructural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage482
local.bibliographicCitation.startpage477
local.contributor.affiliationCarmody, C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDouheret, O, Royal Institute of Technology
local.contributor.affiliationMaknys, K, Royal Institute of Technology
local.contributor.affiliationAnand, S, KTH-Royal Institute of Technology
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology
local.contributor.affiliationGal, Michael, University of New South Wales
local.contributor.authoruidCarmody, C, u9905516
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub5517
local.identifier.citationvolume95
local.identifier.doi10.1063/1.1633349
local.identifier.scopusID2-s2.0-0742303030
local.type.statusPublished Version

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